mitsubishi rf power mos fet RD16HHF1 rohs compliance, silicon mosfet pow e r transistor 30mhz,16w RD16HHF1 mitsubishi electric 7 mar 2008 electrostatic sensitive device o bserve handling precautio n s description RD16HHF1 is a mos fet type transistor specifically designed for hf rf power amplifiers applications. features high power gain: pout>16w, gp>16db @vdd=12.5v,f=30mhz application for output stage of high power amplifiers in hf band mobile radio sets. rohs compliant RD16HHF1-101 is a rohs compliant products. rohs compliance is indicate by the letter ?g? after the lot outline drawing no t e : t o r e l a nce o f no d e s i gn at i o n m ean s t y pi cal v a l u e . di m e n s i o n i n m m . 0. 5+ 0 . 1 0 / - 0 . 1 5 pi n s 1: g a t e 2: s o u r c e 3: d r a i n 1. 3+ / - 0 . 4 1 2 . 3 m i n 2. 5 9. 5 m a x 5 deg 2. 5 4 . 5 + / - 0 . 5 3 . 1 + / - 0 . 6 3. 6 + / - 0 . 2 0 . 8+ 0. 10/ - 0 . 1 5 1. 2+ / - 0 . 4 2 9. 1+ / - 0 . 7 1 2 . 3 + / - 0 . 6 9 + / - 0 . 4 4 . 8 m a x 1 3 . 2 + / - 0 . 4 3 2 marking. this product include the lead in high melting temperature type solders. how ever,it applicable to the following exceptions of rohs directions. 1.lead in high melting temperature type solders(i.e.ti n-lead solder alloys containing more than85% lead.) 1/8
mitsubishi rf power mos fet RD16HHF1 rohs compliance, silicon mosfet pow e r transistor 30mhz,16w RD16HHF1 mitsubishi electric 7 mar 2008 electrostatic sensitive device o bserve handling precautio n s absolute maximum ratings (tc=25 c unless otherwise noted) s y m b o l p a r a m e t e r conditions r atings unit v dss drain to source voltage vgs=0v 50 v v gs s gate to source voltage vds=0v +/- 20 v p c h c h a n n e l d i s s i p a t i o n tc=25 c 5 6 . 8 w p i n i n p u t p o w e r zg=zl=50 ? 0 . 8 w id drain to source current - 5 a t c h c h a n n e l t e m p e r a t u r e - 1 5 0 c tstg storage temperature - -40 to +150 c rth j-c thermal resistance junction to case 2.2 c/w note 1: above paramet ers are guaranteed independently . electrical characteristics (tc=25 c , unless otherwise noted) l i m i t s u n i t s y m b o l p a r a m e t e r c o n d i t i o n s m i n t y p max. i dss zero gate voltage drain current v ds =17v, v gs = 0 v - - 1 0 u a i gs s gate to source leak current v gs =10v, v ds = 0 v - - 1 u a v th gate threshold voltage v ds =12v, i ds = 1 m a 1 . 7 - 4 . 7 v p o u t o u t p u t p o w e r v dd =12.5v, pin=0.4w, 16 19 - w d drain efficiency f=30mhz, idq=0.5a 55 65 - % load vswr tolerance v dd =15.2v,po=16w(pin control) f=30mhz,idq=0.5a,zg=50 ? load vswr=20:1(all phase) no destroy - note : above parameters , ratings , lim its and conditions are subject to change. 2/8
mitsubishi rf power mos fet RD16HHF1 rohs compliance, silicon mosfet pow e r transistor 30mhz,16w RD16HHF1 mitsubishi electric 7 mar 2008 electrostatic sensitive device o bserve handling precautio n s typical characteristics cha nnnel di ssi pa t i on vs. a m bi ent t e mpera t ure 0 20 40 60 80 0 4 0 8 0 120 160 200 ambi ent temperature ta( c) channel di ssi pati o n pch(w) ta=+25c f= 1 m h z ta=+25c f= 1 m h z vgs- i d s cha ra ct eri s t i cs 0 2 4 6 8 10 024 68 1 0 vgs ( v) ids(a ) v d s = 10v ta=+25 c vds vs. cr ss cha ra ct eri s t i cs 0 2 4 6 8 10 01 0 2 0 3 0 vds ( v) crss(pf) vds vs. coss cha ra ct eri s t i cs 0 20 40 60 80 100 01 0 2 0 3 0 vds ( v) coss(pf) vds vs. ci ss cha ra ct eri s t i cs 0 10 20 30 40 50 60 0 1 02 03 0 vds ( v) ciss(pf) ta=+25c f= 1 m h z ta=+25c f= 1 m h z ta=+25c f= 1 m h z vds- i d s cha ra ct eri s t i cs 0 2 4 6 8 02468 1 0 vds ( v) ids(a ) t a = + 25c v g s= 10v vg s = 8 v vg s = 7 v vg s = 5 v vg s = 6 v vg s = 9 v 3/8
mitsubishi rf power mos fet RD16HHF1 rohs compliance, silicon mosfet pow e r transistor 30mhz,16w RD16HHF1 mitsubishi electric 7 mar 2008 electrostatic sensitive device o bserve handling precautio n s typical characteristics pi n - po ch a r a c t e ri s t i c s 0 5 10 15 20 25 0 . 0 0 .2 0 . 4 0 .6 0 . 8 pi n ( w ) pout( w ) i d d( a) 0 20 40 60 80 100 d( %) po d idd t a = + 25c f= 30m h z v dd= 12.5v idq= 0 . 5a pi n - po ch a r a c t e r i s t i c s 0 10 20 30 40 50 - 1 0 0 10 20 30 pi n ( db m) po ( d bm) , gp( d b) , i d d ( a) 0 20 40 60 80 100 d( %) t a = + 25 c f=3 0 m h z vd d=1 2 . 5v idq = 0.5a po 3 3 3 gp v dd-po c h a r a c t e ri s t i c s 0 5 10 15 20 25 30 4 6 8 10 12 14 vdd( v) po( w ) 0 1 2 3 4 5 6 i dd( a) po idd ta = 2 5 c f= 30m h z p i n= 0 . 4w idq= 0 . 5a z g = z i= 50 o h m vg s- i d s ch a r a c t e r i st i c s 2 0 2 4 6 8 24 6 8 1 0 vgs ( v) id s(a ) vds = 10v tc =-2 5 ~+ 75c -2 5 c +7 5c +2 5c 4/8
mitsubishi rf power mos fet RD16HHF1 rohs compliance, silicon mosfet pow e r transistor 30mhz,16w RD16HHF1 mitsubishi electric 7 mar 2008 electrostatic sensitive device o bserve handling precautio n s test circuit(f=30mhz) rd 1 6 h h f 1 c 2 : 4 7 0 p f * 2 i n par al l e l c 1 :1 0 0 p f ,0 .0 2 2 uf , 0 . 1 uf i n p a r a l l e l n o te :b o a r d m a te r i a l - t e f l o n s u b s t r a t e l 5 : 5 t u r n s , i . d 5 . 6 mm, d 0 . 9 mm, p = 1 mm c o p p e r w i r e l 4 : 4 t u r n s , i . d 5 . 6 mm, d 0 . 9 mm, p = 0 . 5 mm c o p p e r w i r e l 3 : 9 t u r n s , i . d 5 . 6 mm, d 0 . 9 mm c o pp er w i r e l 1 :1 0 t u r n s ,i . d 8 m m , d 0 .9 m m c o p p e r w i r e c2 c1 c1 c1 c1 c2 l 2 : 1 0 t u r n s , i . d 6mm, d 1 . 6 mm s i l v e r pl at et ed c o pp e r w i r e rf - o ut rf - i n 67 45 10 0 20 0pf l4 10 0pf 1 oh m l3 22 0pf 20p f 82 pf 1k o h m l2 l1 8. 2k oh m 85 75 15 1. 5 di m e n s i o n s : m m vd d vg g 330 u f , 5 0v mi c r o s t r i p l i n e w i dt h = 4 . 2 mm/ 5 0 oh m, e r : 2 . 7 , t = 1 . 6 mm 34 41 43 5 15 65 / 100 p f 2 20p f 1 0 uf ,5 0 v * 3 p c s 91 10 0pf 20 0pf 88 pf l5 90 10 0 68 pf 5/8
mitsubishi rf power mos fet RD16HHF1 rohs compliance, silicon mosfet pow e r transistor 30mhz,16w RD16HHF1 mitsubishi electric 7 mar 2008 electrostatic sensitive device o bserve handling precautio n s input/output impedance vs.frequency characteristics f=30mhz zout zo=50
f=30mhz zin zin , zout f z i n z o u t ( m h z ) ( o h m ) ( o h m ) c o n d i t i o n s 3 0 2 0 . 0 2 - j 8 9 . 4 2 2 . 9 9 - j 3 . 6 6 po=20w, v d d = 1 2 . 5 v , p i n = 0 . 4 w 6/8
mitsubishi rf power mos fet RD16HHF1 rohs compliance, silicon mosfet pow e r transistor 30mhz,16w RD16HHF1 mitsubishi electric 7 mar 2008 electrostatic sensitive device o bserve handling precautio n s RD16HHF1 s-parameter dat a (@vdd=12.5v, id=800ma) f r eq. [mhz ] ( m ag) ( ang) ( m ag) ( a n g ) ( m ag) ( ang) ( m ag) ( ang) 10 0.928 - 43.2 50.035 150 .2 0.013 60.6 0 .705 - 44.6 30 0.761 - 96.8 32.680 117 .1 0.025 34.3 0 .588 - 92.6 50 0.676 - 121.9 22.018 101 .3 0.027 24.3 0 .540 - 116.9 100 0.650 - 145.8 11.543 81.0 0 .025 20.3 0 .543 - 138.4 150 0.679 - 156.4 7 .560 66.2 0 .023 27.0 0 .586 - 147.1 200 0.709 - 162.7 5 .380 55.7 0 .022 46.4 0 .633 - 153.2 250 0.742 - 168.0 4 .126 45.9 0 .026 63.2 0 .698 - 158.1 300 0.775 - 173.0 3 .208 36.9 0 .034 74.4 0 .727 - 163.2 350 0.801 - 177.7 2 .592 29.6 0 .045 78.3 0 .769 - 168.0 400 0.826 177.7 2 .133 22.6 0 .056 78.4 0 .805 - 172.8 450 0.844 173.2 1 .775 16.6 0 .069 78.1 0 .822 - 176.8 500 0.861 169.0 1 .509 11.3 0 .081 75.3 0 .851 178.9 550 0.874 164.8 1 .283 5.9 0 .093 73.1 0 .867 174.7 600 0.884 160.7 1 .114 2.1 0 .104 69.8 0 .877 170.9 650 0.892 156.9 0 .974 - 1 .9 0.117 67.2 0 .894 166.9 700 0.900 153.0 0 .855 - 5 .3 0.129 63.7 0 .897 163.4 750 0.903 149.1 0 .759 - 8 .4 0.140 60.6 0 .904 159.6 800 0.908 145.5 0 .678 - 1 1 . 3 0 .150 56.8 0 .914 155.9 850 0.912 141.7 0 .614 - 1 3 . 5 0 .161 53.8 0 .915 152.9 900 0.912 137.9 0 .559 - 1 5 . 3 0 .172 50.4 0 .917 149.0 950 0.913 134.3 0 .509 - 1 7 . 3 0 .180 47.1 0 .922 145.4 1000 0.913 130.7 0 .467 - 1 7 . 9 0 .190 43.6 0 .920 142.4 s11 s 21 s12 s 22 7/8
mitsubishi rf power mos fet RD16HHF1 rohs compliance, silicon mosfet pow e r transistor 30mhz,16w RD16HHF1 mitsubishi electric 7 mar 2008 electrostatic sensitive device o bserve handling precautio n s mitsubishi electric corporation puts the maximum effo rt into making semiconductor products better and more reliable, but there is alw a y s the possi bility that trouble may occur w i th them. t r ouble w i th semiconductors may lead to personal injury , fire or property damage. remember to gi ve due consideration to safety w hen making y our circuit designs, w i th appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention agai nst any malfunction or mishap. keep safety first in y our circuit designs! do not use the device at the exceeded the maximum rating condition. in case of plastic molded devices, the exceeded maximum rating condition may cause blow out, smolderi ng or catch fire of the molding resin due to extreme short current flow betw een the drain and the source of the device. t hese re sults causes in fire or injury . w a rning ! 8/8
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